UGF2016
16W, 2.0 GHz, 26V Broadband RF Power N-Channel
Enhancement-Mode Lateral MOSFET
This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with
a minimum output power of 16W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-
Carrier Power Amplifiers in Class A or AB operation.
ALL GOLD metal system for highest reliability.
Industry standard package.
Low intermodulation distortion of 30dBc at 16W (PEP).
Application Specific Performance, 1.84 GHz
GSM:
16 Watts
13.5 dB
EDGE:
8
Watts
13.5
dB
IS95 CDMA:
3.5 Watts
13.5 dB
W-CDMA:
2.3 Watts
13.5 dB
Package Type 440095
PN: UGF2016F
Page 1 of 4
UGF2016 Rev. 1
UGF2016
Maximum Ratings
Rating Symbol
Value
Unit
Drain to Source Voltage, gate connected to source
BV
DSS
65 Volts
Gate to Source Voltage
BV
GSS
+/-
20 Volts
Total Device Dissipation @ Tcase = 70
o
C
Derate above 70
o
C
P
D
TBD
Watts
W/
o
C
Storage Temperature Range
T
STG
-60 to +150
o
C
Operating Junction Temperature
T
J
200
o
C
Thermal Characteristics
Characteristics Symbol
Typical
Unit
Thermal Resistance, Junction to Case
jc
TBD
o
C/W
Electrical DC Characteristics
(T
C
=25
C unless otherwise specified)
Rating Symbol
Min
Typ
Max
Unit
Drain to Source Voltage, gate connected to source
(V
GS
= 0, I
DS
= 1mA)
BV
DSS
65 - -
Volts
Drain to Source Leakage current
(V
DS
= 26V, V
GS
= 0)
I
DSS
- -
0.5
A
Gate to Source Leakage current
(V
GS
= 20V, V
DS
= 0)
I
GSS
- -
1.0
A
Threshold Voltage
(V
DS
= 10V, I
DS
= 1mA)
V
TH
2.0
3.0
5.0
Volts
Gate Quiescent Voltage
(V
DS
= 26 V, I
DQ
= 150mA)
V
GS
(on) 3.0 4.0
6.0
Volts
Drain to Source On Voltage
(V
GS
= 10V, I
DS
= 200mA
V
DS
(on) - -
0.18
Volts
Forward Transconductance
(V
DS
= 10V, I
D
= 0.5A)
G
M
-
0.8 - S
Page 2 of 4
UGF2016 Rev. 1
UGF2016
AC Characteristics
(T
C
=25
C unless otherwise specified)
Rating Symbol
Min
Typ
Max
Unit
Input Capacitance
(V
DS
=26V, V
GS
=0V, freq= 1MHz)
C
ISS
-
TBD
-
pF
Output capacitance
(V
DS
= 26V, V
GS
=0V, freq= 1MHz)
C
OSS
-
TBD
-
pF
Feedback capacitance
(V
DS
=26V, V
GS
=0V, freq= 1MHz
C
RSS
-
TBD
-
pF
RF and Functional Tests
(Tc=25
C unless otherwise specified, Cree Microwave Broadband Fixture)
Rating Symbol
Min
Typ
Max
Unit
Linear Power Gain, Single Tone
(V
DS
=26V, I
DQ
=150mA, P
OUT
=8W, f=1840 MHz)
G
L
12.5
13.5
-
dB
Compressed Power Gain, Single Tone
(V
DS
=26V, I
DQ
=150mA, P
OUT
=16W, f=1840 MHz)
G
P
11.5
12.5
-
dB
Drain Efficiency, Single Tone
(V
DS
=26V, I
DQ
=150mA, P
OUT
=16W, f=1840 MHz)
D
42 48 -
%
Intermodulation Distortion, Two Tone
(V
DS
=26V, I
DQ
=150mA, P
OUT
=16W PEP
f1=1840 MHz, f2=1840.1MHz)
IMD -
-32
-30
dBc
Load Mismatch Tolerance
(V
DS
=26V, I
DQ
=150mA, P
OUT
=16W, f=1840 MHz)
VSWR* 10:1 - -
Note (unless otherwise specified):
1. Source and load impedance shall be 50 ohms.
*No degradation in device performance after test.
CAUTION - MOS Devices are susceptible to damage from Electrostatic Discharge (ESD). Appropriate
precautions in handling, packaging and testing MOS devices must be observed.
Page 3 of 4
UGF2016 Rev. 1
Page 4 of 4
UGF2016 Rev. 1
UGF2016
Product Dimensions
UGF2016F -Package Number 440095
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